FCMT199N60
Manufacturer:
Mfr. Part #:
FCMT199N60
Allchips #:
R001-FCMT199N60-4-H-0000-X-N
Description:
N沟道,600V,20.2A,199mΩ@10V
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Specification
封装 | Power-88 |
Id-连续漏极电流 | 20.2 A |
Pd-功率耗散 | 208 W |
Rds On-漏源导通电阻 | 199 mOhms |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V, 30 V |
Vds-漏源极击穿电压 | 600 V |
Qg-栅极电荷 | 57 nC |
高度 | 1.1 mm |
工作温度范围 | - 50 C~+ 150 C |
长度 | 8 mm |
宽度 | 8 mm |
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N沟道,600V,20.2A,199mΩ@10V
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