FCP650N80Z
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Specification
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 162 W |
Qg-栅极电荷 | 27 nC |
高度 | 16.3 mm |
晶体管极性 | MOSFET |
封装 | TO-220 |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 800 V |
Vgs - 栅极-源极电压 | 20 V, 30 V |
安装方式 | Through Hole |
Rds On-漏源导通电阻 | 650 mOhms |
长度 | 10.67 mm |
宽度 | 4.7 mm |
Id-连续漏极电流 | 10 A |
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