FCPF190N65FL1
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Specification
Pd-功率耗散 | 39 W |
Rds On-漏源导通电阻 | 190 mOhms |
长度 | 10.36 mm |
封装 | TO-220FP-3 |
电路数量 | 1 Channel |
安装方式 | Through Hole |
高度 | 16.07 mm |
Vds-漏源极击穿电压 | 650 V |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 60 nC |
Vgs - 栅极-源极电压 | 20 V, 30 V |
宽度 | 4.9 mm |
Id-连续漏极电流 | 20.6 A |
晶体管极性 | MOSFET |
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