FCPF2250N80Z
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 2.6 A |
长度 | 10.36 mm |
宽度 | 4.9 mm |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 21.9 W |
Rds On-漏源导通电阻 | 2.25 Ohms |
Vds-漏源极击穿电压 | 800 V |
封装 | TO-220F-3 |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 30 V |
Qg-栅极电荷 | 14 nC |
高度 | 16.07 mm |
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MOSFET N-CH 800V 2.6A TO220-3
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