FCPF400N80ZL1
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 11 A |
Qg-栅极电荷 | 43 nC |
高度 | 16.07 mm |
Pd-功率耗散 | 35.7 W |
Rds On-漏源导通电阻 | 400 mOhms |
Vgs - 栅极-源极电压 | 20 V, 30 V |
Vds-漏源极击穿电压 | 800 V |
长度 | 10.36 mm |
宽度 | 4.9 mm |
封装 | TO-220F |
电路数量 | 1 Channel |
安装方式 | Through Hole |
工作温度范围 | - 55 C~+ 150 C |
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