FCU850N80Z
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Specification
晶体管极性 | MOSFET |
宽度 | 2.5 mm |
Qg-栅极电荷 | 22 nC |
Pd-功率耗散 | 75 W |
Vds-漏源极击穿电压 | 800 V |
长度 | 6.8 mm |
高度 | 6.3 mm |
Id-连续漏极电流 | 6 A |
封装 | TO-251-3 |
电路数量 | 1 Channel |
安装方式 | Through Hole |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 850 mOhms |
Vgs - 栅极-源极电压 | 20 V |
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