FDA032N08
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Specification
封装 | TO-3PN-3 |
高度 | 20.1 mm |
安装方式 | Through Hole |
宽度 | 5 mm |
Pd-功率耗散 | 375 W |
长度 | 16.2 mm |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 1 Channel |
Id-连续漏极电流 | 235 A |
Rds On-漏源导通电阻 | 3.2 mOhms |
Vds-漏源极击穿电压 | 75 V |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 175 C |
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