FDA28N50F
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Specification
工作温度范围 | - 55 C~+ 150 C |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 175 mOhms |
封装 | TO-3PN-3 |
Vds-漏源极击穿电压 | 500 V |
Pd-功率耗散 | 310 W |
高度 | 20.1 mm |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 30 V |
Id-连续漏极电流 | 28 A |
长度 | 16.2 mm |
宽度 | 5 mm |
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