FDB016N04AL7
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Specification
封装 | TO-263-7 |
Rds On-漏源导通电阻 | 1.16 mOhms |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 129 nC |
高度 | 4.7 mm |
Id-连续漏极电流 | 160 A |
工作温度范围 | + 175 C |
晶体管极性 | MOSFET |
长度 | 10.2 mm |
宽度 | 9.4 mm |
Pd-功率耗散 | 283 W |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 40 V |
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