FDB0190N807L
Manufacturer:
Mfr. Part #:
FDB0190N807L
Allchips #:
R001-FDB0190N807L-4-H-2423-X-N
Description:
Trans MOSFET N-CH 80V 270A 7-Pin(6+Tab) D2PAK T/R
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Specification
Pd-功率耗散 | 3.8 W |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 1.7 mOhms |
Id-连续漏极电流 | 270 A |
晶体管极性 | MOSFET |
封装 | TO-263-7 |
宽度 | 9.4 mm |
Qg-栅极电荷 | 178 nC |
高度 | 4.7 mm |
Vds-漏源极击穿电压 | 80 V |
长度 | 10.2 mm |
工作温度范围 | - 55 C~+ 175 C |
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