FDB120N10
Manufacturer:
Mfr. Part #:
FDB120N10
Allchips #:
R001-FDB120N10-4-H-0000-X-N
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Specification
封装 | D2PAK |
Pd-功率耗散 | 170 W |
长度 | 10.67 mm |
高度 | 4.83 mm |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | Power Trench MOSFET |
Id-连续漏极电流 | 74 A |
Rds On-漏源导通电阻 | 9.7 Ohms |
Vds-漏源极击穿电压 | 100 V |
宽度 | 9.65 mm |
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