FDB150N10
Manufacturer:
Mfr. Part #:
FDB150N10
Allchips #:
R001-FDB150N10-4-H-0000-X-N
Description:
MOSFET N-CH 100V 57A D2PAK
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Specification
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 15 mOhms |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
封装 | TO-263-3 |
长度 | 10.67 mm |
宽度 | 9.65 mm |
Vds-漏源极击穿电压 | 100 V |
高度 | 4.83 mm |
Pd-功率耗散 | 110 W |
Id-连续漏极电流 | 57 A |
安装方式 | SMD/SMT |
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