FDB8444
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Specification
封装 | TO-263AB |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 40 V |
工作温度范围 | - 55 C~+ 175 C |
Pd-功率耗散 | 167 W |
电路数量 | 1 Channel |
Id-连续漏极电流 | 70 A |
长度 | 10.67 mm |
宽度 | 9.65 mm |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 3.9 mOhms |
安装方式 | SMD/SMT |
高度 | 4.83 mm |
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