FDB86363-F085
Manufacturer:
Mfr. Part #:
FDB86363-F085
Allchips #:
R001-FDB86363-F085-4-H-0000-X-Y
Description:
MOSFET N-CH 80V 110A TO263
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Specification
资格等级 | AEC-Q101 |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 80 V |
工作温度范围 | - 55 C~+ 175 C |
封装 | TO-263 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 110 A |
Pd-功率耗散 | 300 W |
Vgs - 栅极-源极电压 | 20 V |
长度 | 10.67 mm |
宽度 | 9.65 mm |
Qg-栅极电荷 | 131 nC |
高度 | 4.83 mm |
Rds On-漏源导通电阻 | 2 mOhms |
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