FDB86566-F085
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Specification
Rds On-漏源导通电阻 | 2.2 mOhms |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 80 A |
电路数量 | 1 Channel |
Qg-栅极电荷 | 110 nC |
高度 | 4.83 mm |
Pd-功率耗散 | 176 W |
资格等级 | AEC-Q101 |
封装 | TO-263-3 |
长度 | 10.67 mm |
宽度 | 9.65 mm |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
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表面贴装型 N 通道 60V 110A(Tc) 176W(Tj) D²PAK(TO-263AB)
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