FDBL86066-F085
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Specification
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
Id-连续漏极电流 | 240 A |
资格等级 | AEC-Q101 |
Vds-漏源极击穿电压 | 100 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 300 W |
工作温度范围 | - 55 C~+ 175 C |
Qg-栅极电荷 | 69 nC |
封装 | H-PSOF-8 |
Rds On-漏源导通电阻 | 4.1 mOhms |
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表面贴装型 N 通道 100V 185A(Tc) 300W(Ta) 8-HPSOF
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表面贴装型 N 通道 100V 185A(Tc) 300W(Ta) 8-HPSOF
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