FDC6301N
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Specification
Pd-功率耗散 | 900 mW |
电路数量 | 2 Channel |
Vds-漏源极击穿电压 | 25 V |
封装 | SuperSOT™-6 |
晶体管极性 | FET |
Vgs - 栅极-源极电压 | 8 V, - 500 mV |
Rds On-漏源导通电阻 | 3.8 Ohms |
高度 | 1.1 mm |
Id-连续漏极电流 | 220 mA |
工作温度范围 | - 55 C~+ 150 C |
长度 | 2.9 mm |
宽度 | 1.6 mm |
安装方式 | SMD/SMT |
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