FDC638APZ
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Specification
Id-连续漏极电流 | 4.5 A |
晶体管极性 | MOSFET |
高度 | 1.1 mm |
Vds-漏源极击穿电压 | 20 V |
封装 | SuperSOT™-6 |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 1.6 W |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 12 V |
Rds On-漏源导通电阻 | 43 mOhms |
长度 | 2.9 mm |
宽度 | 1.6 mm |
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FDC638APZ
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Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R
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FDC638APZ
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Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R
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FDC638APZ
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表面贴装型 P 通道 20V 4.5A(Ta) 1.6W(Ta) SuperSOT™-6
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