FDD18N20LZ
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Specification
高度 | 2.39 mm |
Vds-漏源极击穿电压 | 200 V |
Rds On-漏源导通电阻 | 125 mOhms |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 16 A |
电路数量 | 1 Channel |
封装 | TO-252AA |
Pd-功率耗散 | 89 W |
工作温度范围 | - 55 C~+ 150 C |
长度 | 6.73 mm |
宽度 | 6.22 mm |
晶体管极性 | MOSFET |
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Trans MOSFET N-CH 200V 16A 3-Pin(2+Tab) DPAK T/R
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Trans MOSFET N-CH 200V 16A 3-Pin(2+Tab) DPAK T/R
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