FDD5680
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Specification
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 38 A |
Pd-功率耗散 | 60 W |
工作温度范围 | - 55 C~+ 150 C |
高度 | 2.39 mm |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 17 mOhms |
安装方式 | SMD/SMT |
封装 | TO-252 |
长度 | 6.73 mm |
宽度 | 6.22 mm |
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FDD5680
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表面贴装型 N 通道 60V 8.5A(Ta) 2.8W(Ta),60W(Tc) TO-252
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