FDD5N50NZFTM
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Specification
封装 | TO-252-3 |
Vds-漏源极击穿电压 | 500 V |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 3.7 A |
Rds On-漏源导通电阻 | 1.47 Ohms |
高度 | 2.39 mm |
Vgs - 栅极-源极电压 | 25 V |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
长度 | 6.73 mm |
宽度 | 6.22 mm |
Pd-功率耗散 | 62.5 W |
晶体管极性 | MOSFET |
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Trans MOSFET N-CH 500V 3.7A 3-Pin(2+Tab) DPAK T/R
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表面贴装型 N 通道 500V 3.7A(Tc) 62.5W(Tc) DPAK
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