FDD6N50FTM
Manufacturer:
Mfr. Part #:
FDD6N50FTM
Allchips #:
R001-FDD6N50FTM-4-H-0000-X-N
Description:
MOSFET N-CH 500V 5.5A DPAK
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Specification
封装 | TO-252AA |
Rds On-漏源导通电阻 | 1.15 Ohms |
Pd-功率耗散 | 89 W |
高度 | 2.39 mm |
Vgs - 栅极-源极电压 | 30 V |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 5.5 A |
长度 | 6.73 mm |
宽度 | 6.22 mm |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 500 V |
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