FDD850N10L
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Specification
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
长度 | 6.73 mm |
宽度 | 6.22 mm |
封装 | TO-252-3 |
Rds On-漏源导通电阻 | 64 mOhms |
安装方式 | SMD/SMT |
Pd-功率耗散 | 50 W |
Qg-栅极电荷 | 22.2 nC |
高度 | 2.39 mm |
工作温度范围 | + 175 C |
Id-连续漏极电流 | 15.7 A |
Vds-漏源极击穿电压 | 100 V |
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表面贴装型 N 通道 100V 15.7A(Tc) 50W(Tc) DPAK
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