FDD86113LZ
Manufacturer:
Mfr. Part #:
FDD86113LZ
Allchips #:
R001-FDD86113LZ-4-H-2201-X-N
Description:
Trans MOSFET N-CH Si 100V 4.2A 3-Pin(2+Tab) DPAK T/R
ECAD Model:
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Specification
| 高度 | 2.39 mm |
| Id-连续漏极电流 | 4.2 A |
| 长度 | 6.73 mm |
| 宽度 | 6.22 mm |
| Pd-功率耗散 | 3.1 W |
| 安装方式 | SMD/SMT |
| 封装 | TO-252AA |
| 晶体管极性 | MOSFET |
| Rds On-漏源导通电阻 | 104 mOhms |
| 电路数量 | 1 Channel |
| 工作温度范围 | - 55 C~+ 150 C |
| Vds-漏源极击穿电压 | 100 V |
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FDD86113LZ
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表面贴装型 N 通道 100V 4.2A（Ta），5.5A（Tc） 3.1W（Ta），29W（Tc） D-PAK（TO-252）
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