FDG6304P
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Specification
晶体管极性 | FET |
Vgs - 栅极-源极电压 | - 8 V |
封装 | SOT-323-6 |
电路数量 | 2 Channel |
Vds-漏源极击穿电压 | 25 V |
高度 | 1.1 mm |
Pd-功率耗散 | 300 mW |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 1.1 Ohms |
工作温度范围 | - 55 C~+ 150 C |
长度 | 2 mm |
宽度 | 1.25 mm |
Id-连续漏极电流 | 410 mA |
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