FDMA7672
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Specification
封装 | MicroFET-6 |
Qg-栅极电荷 | 9.3 nC |
高度 | 0.75 mm |
工作温度范围 | -55°C~150°C(TJ) |
Pd-功率耗散 | 2.4 W |
Vgs - 栅极-源极电压 | 20 V |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 30 V |
Id-连续漏极电流 | 9 A |
晶体管极性 | MOSFET |
长度 | 2 mm |
宽度 | 2 mm |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 14 mOhms |
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