FDMB3800N
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Specification
Pd-功率耗散 | 1.6 W |
Rds On-漏源导通电阻 | 32 mOhms |
封装 | 8-MLP,MicroFET(3x1.9) |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 30 V |
电路数量 | 2 Channel |
安装方式 | SMD/SMT |
长度 | 3 mm |
宽度 | 1.9 mm |
高度 | 0.8 mm |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 4.8 A |
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