FDMB3900AN
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Specification
晶体管极性 | MOSFET |
封装 | MicroFET-8 |
Vds-漏源极击穿电压 | 25 V |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 23 mOhms |
Pd-功率耗散 | 1.6 W |
安装方式 | SMD/SMT |
电路数量 | 2 Channel |
长度 | 3 mm |
宽度 | 1.9 mm |
高度 | 0.8 mm |
Id-连续漏极电流 | 7 A |
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