FDMC8200
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Specification
封装 | Power-33-8 |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 16 mOhms |
Vds-漏源极击穿电压 | 30 V |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | Power Trench MOSFET |
Id-连续漏极电流 | 18 A |
Pd-功率耗散 | 1.9 W, 2.2 W |
安装方式 | SMD/SMT |
电路数量 | 2 Channel |
长度 | 3 mm |
宽度 | 3 mm |
Qg-栅极电荷 | 7.3 nC, 16 nC |
高度 | 0.8 mm |
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