FDMC86160ET100
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Specification
晶体管极性 | MOSFET |
长度 | 3.3 mm |
宽度 | 3.3 mm |
安装方式 | SMD/SMT |
Pd-功率耗散 | 54 W |
封装 | Power-33-8 |
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 21 mOhms |
Id-连续漏极电流 | 43 A |
Qg-栅极电荷 | 15 nC |
高度 | 0.8 mm |
Vds-漏源极击穿电压 | 100 V |
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FDMC86160ET100
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表面贴装型 N 通道 100V 9A(Ta),43A(Tc) 2.8W(Ta),65W(Tc) Power33
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