FDMD85100
Manufacturer:
Mfr. Part #:
FDMD85100
Allchips #:
R001-FDMD85100-4-H-2201-X-N
Description:
Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R
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Specification
宽度 | 3.3 mm |
电路数量 | 2 Channel |
长度 | 3.3 mm |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
封装 | Power-8 5x6 |
Id-连续漏极电流 | 48 A |
Rds On-漏源导通电阻 | 18.7 mOhms, 18.6 mOhms |
Vds-漏源极击穿电压 | 100 V |
Pd-功率耗散 | 50 W |
Vgs - 栅极-源极电压 | 20 V |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 22 nC, 21 nC |
高度 | 0.8 mm |
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