FDMD86100
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Specification
Rds On-漏源导通电阻 | 10.5 mOhms |
Qg-栅极电荷 | 21 nC |
高度 | 0.8 mm |
Vds-漏源极击穿电压 | 100 V |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 20 V |
封装 | Power-8 5x6 |
Pd-功率耗散 | 33 W |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
长度 | 3.3 mm |
宽度 | 3.3 mm |
Id-连续漏极电流 | 39 A |
电路数量 | 2 Channel |
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