FDMQ86530L
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Specification
Pd-功率耗散 | 22 W |
电路数量 | 4 Channel |
封装 | MLP-12 |
晶体管极性 | MOSFET |
高度 | 0.8 mm |
长度 | 5 mm |
宽度 | 4.5 mm |
Vds-漏源极击穿电压 | 60 V |
Id-连续漏极电流 | 8 A |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 17.5 mOhms |
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FDMQ86530L
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MOSFET - 阵列 4 个 N 通道(H 桥) 60V 8A 1.9W 表面贴装型 12-MLP(5x4.5)
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FDMQ86530L
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MOSFET - 阵列 4 个 N 通道(H 桥) 60V 8A 1.9W 表面贴装型 12-MLP(5x4.5)
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