FDMS86102LZ
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Specification
Vds-漏源极击穿电压 | 100 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 7 A |
宽度 | 5 mm |
Pd-功率耗散 | 69 W |
封装 | PQFN-8(5x6) |
长度 | 6 mm |
高度 | 1.1 mm |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 37 mOhms |
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