FDMS86103L
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Specification
Pd-功率耗散 | 2.5 W |
Vgs - 栅极-源极电压 | 20 V |
Qg-栅极电荷 | 43 nC |
高度 | 1.1 mm |
工作温度范围 | + 150 C |
Id-连续漏极电流 | 12 A |
晶体管极性 | MOSFET |
封装 | Power-56-8 |
Vds-漏源极击穿电压 | 100 V |
宽度 | 5 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 6.4 mOhms |
长度 | 6 mm |
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