FDMS86150ET100
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Specification
封装 | Power-56-8 |
Vgs - 栅极-源极电压 | 20 V |
高度 | 0.8 mm |
长度 | 3.3 mm |
Id-连续漏极电流 | 128 A |
宽度 | 3.3 mm |
Rds On-漏源导通电阻 | 3.9 mOhms |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 44 nC |
工作温度范围 | - 55 C~+ 175 C |
Pd-功率耗散 | 187 W |
Vds-漏源极击穿电压 | 100 V |
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FEATURED PRODUCT SOMRON
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FDMS86150ET100
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Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R
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FDMS86150ET100
ON
Trans MOSFET N-CH 100V 16A 8-Pin Power QFN EP T/R
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FDMS86150ET100
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表面贴装型 N 通道 100V 16A(Ta),128A(Tc) 3.3W(Ta),187W(Tc) Power56
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