FDMS86163P
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Specification
封装 | PQFN-8(5x6) |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 100V |
Pd-功率耗散 | 2.5W(Ta),104W(Tc) |
安装方式 | 表面贴装型 |
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The following parts include 'FDMS86163P'
FDMS86163P Releted Information
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FDMS86163P
ON Semiconductor
Trans MOSFET P-CH 100V 7.9A 8-Pin PQFN EP T/R
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FDMS86163P
ON
表面贴装型 P 通道 100V 7.9A(Ta),50A(Tc) 2.5W(Ta),104W(Tc) 8-PQFN(5x6)
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FDMS86163P
ON
表面贴装型 P 通道 100V 7.9A(Ta),50A(Tc) 2.5W(Ta),104W(Tc) 8-PQFN(5x6)
Learn More >
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FDMS86163P
ON
表面贴装型 P 通道 100V 7.9A(Ta),50A(Tc) 2.5W(Ta),104W(Tc) 8-PQFN(5x6)
Learn More >
-
-
-
FDMS86163P
ON
表面贴装型 P 通道 100V 7.9A(Ta),50A(Tc) 2.5W(Ta),104W(Tc) 8-PQFN(5x6)
Learn More >
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