FDMS86263P
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Specification
Vds-漏源极击穿电压 | 150 V |
封装 | DFN-8(4.9x5.8) |
电路数量 | 1 Channel |
Pd-功率耗散 | 104 W |
Rds On-漏源导通电阻 | 42 mOhms |
长度 | 6 mm |
宽度 | 5 mm |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 25 V |
Id-连续漏极电流 | 22 A |
Qg-栅极电荷 | 63 nC |
高度 | 1.1 mm |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
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