FDMS86350
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Specification
封装 | Power-56-8 |
Rds On-漏源导通电阻 | 2 mOhms |
Id-连续漏极电流 | 80 A |
安装方式 | SMD/SMT |
Pd-功率耗散 | 156 W |
长度 | 3.3 mm |
宽度 | 3.3 mm |
Qg-栅极电荷 | 110 nC |
高度 | 0.8 mm |
Vds-漏源极击穿电压 | 80 V |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
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