FDMT1D3N08B
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Specification
Id-连续漏极电流 | 164 A |
Rds On-漏源导通电阻 | 1.1 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 80 V |
Vgs - 栅极-源极电压 | 20 V |
Qg-栅极电荷 | 260 nC |
晶体管极性 | MOSFET |
封装 | DualCool-88-8 |
Pd-功率耗散 | 178 W |
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