FDN5632N-F085
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Specification
Id-连续漏极电流 | 1.6 A |
电路数量 | 1 Channel |
Pd-功率耗散 | 1.1 W |
安装方式 | SMD/SMT |
封装 | SSOT-3 |
长度 | 2.9 mm |
宽度 | 1.4 mm |
工作温度范围 | - 55 C~+ 150 C |
高度 | 1.12 mm |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
资格等级 | AEC-Q101 |
Rds On-漏源导通电阻 | 98 mOhms |
晶体管极性 | Power Trench MOSFET |
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