FDP032N08B-F102
Manufacturer:
Mfr. Part #:
FDP032N08B-F102
Allchips #:
R001-FDP032N08B-F102-4-H-0000-X-Y
Description:
80V、211A N沟道
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Specification
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 2.85 mOhms |
封装 | TO-220 |
长度 | 10.67 mm |
宽度 | 4.7 mm |
Vds-漏源极击穿电压 | 80 V |
Qg-栅极电荷 | 111 nC |
高度 | 16.3 mm |
Pd-功率耗散 | 263 W |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Id-连续漏极电流 | 211 A |
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 175 C |
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