FDP039N08B-F102
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Specification
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 3.9 mOhms |
封装 | TO-220-3 |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 102 nC |
高度 | 16.3 mm |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 80 V |
安装方式 | Through Hole |
Id-连续漏极电流 | 171 A |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 214 W |
长度 | 10.67 mm |
宽度 | 4.7 mm |
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