FDP51N25
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Specification
Id-连续漏极电流 | 51 A |
封装 | TO-220 |
电路数量 | 1 Channel |
长度 | 10.67 mm |
宽度 | 4.7 mm |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 30 V |
高度 | 16.3 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 250 V |
Pd-功率耗散 | 320 W |
Rds On-漏源导通电阻 | 60 mOhms |
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