FDPC8016S
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Specification
封装 | Power-56-8 |
Pd-功率耗散 | 21 W, 42 W |
Qg-栅极电荷 | 25 nC, 67 nC |
高度 | 1.1 mm |
Id-连续漏极电流 | 60 A, 100 A |
长度 | 6 mm |
宽度 | 5 mm |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 25 V |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 12 V |
晶体管极性 | MOSFET |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 1.5 mOhms, 3.9 mOhms |
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FDPC8016S
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MOSFET - 阵列 2 N 沟道(双)非对称型 25V 20A,35A 2.1W,2.3W 表面贴装型 电源夹 Clip56
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FDPC8016S
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MOSFET - 阵列 2 N 沟道(双)非对称型 25V 20A,35A 2.1W,2.3W 表面贴装型 电源夹 Clip56
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