FDPF16N50UT
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Specification
Rds On-漏源导通电阻 | 370 mOhms |
工作温度范围 | -55°C~150°C(TJ) |
Qg-栅极电荷 | 32 nC |
高度 | 16.07 mm |
安装方式 | Through Hole |
Pd-功率耗散 | 38.5 W |
Vds-漏源极击穿电压 | 500 V |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 30 V |
Id-连续漏极电流 | 15 A |
长度 | 10.36 mm |
宽度 | 4.9 mm |
封装 | TO-220FP-3 |
电路数量 | 1 Channel |
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