FDPF5N50NZF
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Specification
Vgs - 栅极-源极电压 | 25 V |
Qg-栅极电荷 | 9 nC |
高度 | 16.07 mm |
Id-连续漏极电流 | 4.2 A |
封装 | TO-220F-3 |
Rds On-漏源导通电阻 | 1.57 Ohms |
安装方式 | Through Hole |
Pd-功率耗散 | 30 W |
长度 | 10.36 mm |
宽度 | 4.9 mm |
Vds-漏源极击穿电压 | 500 V |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | N-Channel MOSFET |
电路数量 | 1 Channel |
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