FDS5670
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Specification
Pd-功率耗散 | 2.5 W |
封装 | SOIC-8 |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 14 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
高度 | 1.75 mm |
Id-连续漏极电流 | 10 A |
长度 | 4.9 mm |
宽度 | 3.9 mm |
电路数量 | 1 Channel |
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