FDT457N
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Specification
Rds On-漏源导通电阻 | 60 mOhms |
电路数量 | 1 Channel |
Pd-功率耗散 | 3 W |
封装 | SOT-223-4 |
晶体管极性 | MOSFET |
工作温度范围 | - 65 C~+ 150 C |
高度 | 1.8 mm |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 5 A |
Vds-漏源极击穿电压 | 30 V |
Vgs - 栅极-源极电压 | 20 V |
长度 | 6.5 mm |
宽度 | 3.5 mm |
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