FGD3245G2-F085C
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Specification
Vgs - 栅极-源极电压 | 0.9µs/5.4µs |
Pd-功率耗散 | 150W |
封装 | TO-252-3 |
工作温度范围 | -40°C~175°C(TJ) |
晶体管极性 | ,晶体管-UGBT,MOSFET-单 |
Vds-漏源极击穿电压 | 450V |
安装方式 | 表面贴装型 |
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